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GP201MHS18 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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GP201MHS18 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 10 page ![]() GP201MHS18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig. 12 Transient thermal impedance Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature Fig. 11 Forward bias safe operating area 1 10 100 1000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) 50 µs 100 µs IC max. (single pulse) tp = 1ms 0 100 150 200 250 300 350 50 110 20 fmax - (kHz) Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 4.7Ω, VCC = 900V PWM Sine Wave Power Factor = 0.9, Modulation Index =1 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) 1 10 100 1000 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Diode Transistor |
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