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SSI2007 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSI2007 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 m P-Ch: -0.56A, -20V, RDS(ON) 800 m N & P-Ch Enhancement Mode Power MOSFET 17-Dec-2013 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: PACKAGE INFORMATION Package MPQ Leader Size SOT-563 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Part Number N-Channel P-Channel Parameter Symbol 10S Steady State 10S Steady State Unit Drain – Source Voltage VDS 20 -20 V Gate – Source Voltage VGS ±6 V TA= 25°C 0.88 0.8 -0.64 -0.56 Continuous Drain Current 1 TA= 70°C ID 0.71 0.64 -0.51 -0.45 A TA= 25°C 0.37 0.3 0.37 0.29 Power Dissipation 1 TA= 70°C PD 0.23 0.19 0.23 0.18 W TA= 25°C 0.76 0.69 -0.54 -0.5 Continuous Drain Current 2 TA= 70°C ID 0.6 0.55 -0.43 -0.4 A TA= 25°C 0.27 0.22 0.27 0.22 Power Dissipation 2 TA= 70°C PD 0.17 0.14 0.17 0.14 W Pulsed Drain Current 3 IDM 1.4 -1 A Maximum Junction-to-Lead RθJL 260 °C / W Operating Junction & Storage Temperature Range TJ, TSTG 150, -55~150 °C SOT-563 07* E F J B C D G A H Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05 Date Code Top View |
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