SSI2007 datasheet(3/7 Pages) SECOS

3 / 7 page

Elektronische Bauelemente

SSI2007

N-Ch: 0.8A, 20V, RDS(ON) 260 m

P-Ch: -0.56A, -20V, RDS(ON) 800 m

N & P-Ch Enhancement Mode Power MOSFET

17-Dec-2013 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Dynamic Characteristics

N-Ch

Input Capacitance

P-Ch

CISS

74.5

N-Ch

Output Capacitance

P-Ch

COSS

10.8

N-Ch

Reverse Transfer Capacitance

P-Ch

CRSS

10.2

N-Ch:

VDS=10V, VGS=0,

f=1MHz

P-Ch:

VDS= -10V, VGS=0,

f=100KHz

N-Ch

1.15

Total Gate Charge

P-Ch

QG(TOT)

1.1

N-Ch

0.06

Threshold Gate Charge

P-Ch

QG(TH)

0.08

N-Ch

0.15

Gate-to-Source Charge

P-Ch

QGS

0.44

N-Ch

0.23

Gate-to-Drain Charge

P-Ch

QGD

0.18

N-Ch:

VDS=10V, VGS=4.5V,

ID=0.6A

P-Ch:

VDS= -10V, VGS= -4.5V,

ID= -0.6A

N-Ch

Turn-on Delay Time

P-Ch

Td(ON)

N-Ch

Rise Time

P-Ch

140

N-Ch

700

Turn-off Delay Time

P-Ch

Td(OFF)

1500

N-Ch

380

Fall Time

P-Ch

2100

N-Ch:

VDD=10V, I D=0.5A,

VGEN=4.5V,

RL=10 , RG=6 .

P-Ch:

VDD= -10V, I D= -0.5A,

VGEN= -4.5V,

RL=10 , RG=6 .

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