Elektronische Bauelemente

SSI2007

N-Ch: 0.8A, 20V, RDS(ON) 260 m

P-Ch: -0.56A, -20V, RDS(ON) 800 m

N & P-Ch Enhancement Mode Power MOSFET

17-Dec-2013 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

THERMAL RESISTANCE RATINGS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%

4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

N-Ch

20

-

-

Drain-Source Breakdown Voltage

P-Ch

-20

-

-

V

N-Ch

-

-

100

Zero Gate Voltage Drain Current

P-Ch

-

-

-100

nA

N-Ch

-

-

±5

Gate-Source Leakage

P-Ch

-

-

±5

µA

N-Ch

0.45

0.58

0.85

Gate-Threshold Voltage

P-Ch

-0.45

-0.55

-0.8

V

N-Ch

-

220

260

P-Ch

-

600

800

N-Ch

-

260

310

P-Ch

-

780

1000

N-Ch

-

320

380

Drain-Source On Resistance

P-Ch

-

960

1250

m

N-Ch

-

2

-

Forward Transconductance

P-Ch

-

1.25

-

S

Body-Drain Diode Ratings

N-Ch

0.5

0.7

1.1

Diode Forward On–Voltage

P-Ch

-0.5

-0.65

-1.1

V

Part Number

N-Channel

P-Channel

Parameter

Symbol

Typ.

Max.

Typ.

Max.

Unit

T≦10S

285

335

290

335

Junction-to-Ambient Thermal Resistance

1

Steady State

340

405

350

430

T≦10S

385

450

385

460

Junction-to-Ambient Thermal Resistance

2

Steady State

455

545

465

555

Junction-to-Case Thermal Resistance

Steady State

260

300

280

320

°C / W