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STP80N70F6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STP80N70F6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 13 page ![]() Electrical characteristics STP80N70F6 6/13 Doc ID 023433 Rev 1 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance ID 1 0.1 0.1 1 VDS(V) 10 (A) Oper ation in thi s are a i s Limited by m ax R DS (on) 1ms 10ms 100µs Tj=175°C Tc=25°C Single pulse 10 100 AM15420v1 10 -6 10 -5 10 -4 10 -3 10 -2 tp(s) 10 -3 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/τ tp τ Single pulse δ=0.5 10 -2 10 -1 10 0 280TOEG ID 150 100 50 0 0 2 VDS(V) (A) 1 200 VGS= 4 V VGS= 5 V VGS= 10 V 250 VGS= 6 V 3 300 AM15427v1 ID 150 100 50 0 2 4 VGS(V) 6 (A) 3 5 7 200 8 VDS= 4 V 9 10 250 300 AM15422v1 VGS 6 4 2 0 0 20 Qg(nC) (V) 8 40 10 VDD=34V ID=96A 60 80 100 12 AM15423v1 RDS(on) 4 2 0 0 30 ID(A) (m Ω) 10 50 6 8 70 20 40 60 80 VGS=10V 10 12 14 AM15429v1 |
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