STP80N70F6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STP80N70F6

Description	N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 13 page

Electrical characteristics

STP80N70F6

4/13

Doc ID 023433 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 250 µA

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = 68 V

µA

VDS = 68 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 48 A

0.0063

0.008

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

5850

Coss

Output capacitance

341

Crss

Reverse transfer

capacitance

240

Total gate charge

VDD = 34 V, ID = 96 A,

VGS = 10 V

(see Figure 14)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 10 V, ID = 48 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

td(off)

Turn-off-delay time

Fall time

102

STP80N70F6 Datasheet(PDF) 4 Page - STMicroelectronics

STP80N70F6 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL