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STP80N70F6 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP80N70F6
Description  N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80N70F6 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
December 2012
Doc ID 023433 Rev 1
1/13
13
STP80N70F6
N-channel 68 V, 0.0063
Ω typ., 96 A STripFET™ VI DeepGATE™
Power MOSFET in TO-220 package
Datasheet
−production data
Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Figure 1.
Internal schematic diagram
Order code
VDSS
max.
RDS(on) max.
ID
PTOT
STP80N70F6
68 V
< 0.008
Ω
(VGS= 10 V)
96 A 110 W
TO-220
1
2
3
TAB
Table 1.
Device summary
Order code
Marking
Package
Packaging
STP80N70F6
80N70F6
TO-220
Tube
www.st.com


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