BC807_BC807W_BC327_6

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

4 of 19

NXP Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

5.

Limiting values

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Valid for all available selection groups.

6.

Thermal characteristics

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Valid for all available selection groups.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−50

V

collector-emitter voltage

open base;

-

−45

V

emitter-base voltage

open collector

-

−5V

collector current (DC)

-

−500

mA

peak collector current

-

−1A

peak base current

-

−200

mA

total power dissipation

BC807

[1][2] -

250

mW

BC807W

[1][2] -

200

mW

BC327

[1][2] -

625

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

BC807

[1][2] --

500

K/W

BC807W

[1][2] --

625

K/W

BC327

[1][2] --

200

K/W