Page 1

NPT1015

NDS-035 Rev. 2, 121213

Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT

DC-3.5 GHz

45W

GaN HEMT

Symbol

Parameter

Min

Typ

Max

Units

Small-signal Gain

-

13.5

-

dB

Saturated Output Power

-

47.3

-

dBm

Efficiency at Saturated Output Power

-

57

-

%

10.5

12

-

dB



47

54

-

%

Drain Voltage

-

28

-

V



Ruggedness: Output Mismatch, All Phase Angles

VSWR = 15:1, No Device Damage

Product Description

The NPT1015 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This

device has been designed for CW, pulsed, and linear operation with output power levels to 45W

(46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product

has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand

extreme mismatch on the input and output with no device damage.

Features



Suitable for linear and saturated applications



Tunable from DC-3.5 GHz



28V Operation



Industry Standard Package



High Drain Efficiency (>55%)



Rugged Design Passes 15:1 VSWR test



Applications



Defense Communications



Land Mobile Radio



Avionics



Wireless Infrastructure



ISM Applications



VHF/UHF/L-Band Radar