2SJ494 datasheet(2/8 Pages) NEC

2 / 8 page

2SJ494

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On-state Resistance

RDS(on)1

VGS = –10 V, ID = –10 A

RDS(on)2

VGS = –4 V, ID = –10 A

Gate to Source Cutoff Voltage

VGS (off)

VDS = –10 V, ID = –1 mA

–1.0

–1.5

–2.0

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –10 A

8.0

Drain Leakage Current

IDSS

VDS = –60 V, VGS = 0

–10

Gate to Source Leakage Current

IGSS

VGS = +20 V, VDS = 0

+10

Input Capacitance

Ciss

2360

Output Capacitance

Coss

1060

Reverse Transfer Capacitance

Crss

350

Turn-On Delay Time

td(on)

Rise Time

160

Turn-Off Delay Time

td(off)

310

Fall Time

240

Total Gate Charge

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Body Diode Forward Voltage

VF(S-D)

IF = 20 A, VGS = 0

1.0

1.5

Reverse Recovery Time

trr

130

Reverse Recovery Charge

Qrr

290

Test Circuit 1 Switching Time

Test Circuit 2 Gate Charge

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –10 A

VGS(on) = –10 V

VDD = –30 V

RG = 10

ID = –20 A

VDD = –48 V

VGS = –10 V

IF = 20 A, VGS = 0

di/dt = 100 A/

PG.

IG = 2 mA

Ω

D.U.T.

VDD

PG.

RG = 10

Ω

D.U.T.

VDD

VGS

t = 1 s

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

10 %

VGS (on)

ton

toff

td (on)

td (off)

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