ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

BCY58/59

DESCRIPTION

SYMBOL TEST CONDITION

VALUE

UNITS

DC Current Gain

hFE

IC=10mA,VCE=1V

BCY58-7/59-7

>80

BCY58-8/59-8

120 to 400

BCY58-9/59-9

160 to 630

BCY58-10/59-10

240 to 1000

IC=100mA,VCE=1V

BCY58-7/59-7

>40

BCY58-8/59-8

>45

BCY58-9/59-9

>60

BCY58-10/59-10

>60

Collector -Emitter Saturation Voltage

VCE(Sat) IC=10mA, IB=0.25mA

0.05 to 0.35

V

IC=100mA, IB=2.5mA

0.15 to 0.70

V

Base -Emitter Saturation Voltage

VBE(Sat)

IC=10mA, IB=0.25mA

0.60 to 0.85

V

IC=100mA, IB=2.5mA

0.75 to1.2

V

Base Emitter on Voltage

VBE(on)

IC=2mA, VCE=5V

0.55 to 0.70

V

DYNAMIC CHARACTERISTICS

Current Gain-Bandwidth Product

ft

IC=10mA,VCE=5V,

>125

MHz

f=100MHz

Output- Capacitance

Cob

VCB=10V, f=1MHz

<6.0

pF

Input- Capacitance

Cib

VBE=0.5V, f=1MHz

<15

pF

ALL f=1kHz

Small Signal Current Gain

hfe

IC=2mA, VCE=5V

BCY58-7/59-7

125 to 250

BCY58-8/59-8

175 to 350

BCY58-9/59-9

250 to 500

BCY58-10/59-10

350 to 700

Out put AdmIttance

hoe

IC=2mA, VCE=5V

BCY58-7/59-7

<30

umhos

BCY58-8/59-8

<50

BCY58-9/59-9

<60

BCY58-10/59-10

<100

Input Impedance

hie

IC=2mA, VCE=5V

BCY58-7/59-7

1.6 to 4.5

kohms

BCY58-8/59-8

2.5 to 6.0

BCY58-9/59-9

3.2 to 8.5

BCY58-10/59-10

4.5-12

Voltage Feedback Ratio

hre

IC=2mA, VCE=5V

BCY58-7/59-7

Typ1.5

X10-4

BCY58-8/59-8

Typ 2.0

BCY58-9/59-9

Typ 2.0

BCY58-10/59-10

Typ 3.0

Continental Device India Limited

Data Sheet

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