NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

BCY58, BCY59

TO-18

Low Noise Audio Amplifier Input Stages & Driver Applications

Complementary BCY78/79

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BCY58

BCY59

UNITS

Collector -Emitter Voltage

VCEO

32

45

V

Collector -Emitter Voltage(RBE=10 ohms)

VCES

32

45

V

Emitter -Base Voltage

VEBO

7.0

V

Collector Current Continuous

IC

0.2

A

Power Dissipation@ Ta=25 degC

PD

0.6

W

Derate Above 25 deg C

2.28

mW/deg C

Power Dissipation@ Tc=25 degC

PD

1.0

W

Derate Above 25 deg C

6.67

mW/deg C

Operating And Storage Junction

Tj, Tstg

-65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

150

deg C/W

Junction to Ambient

Rth(j-a)

450

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

BCY58

BCY59

UNITS

Collector -Emitter Voltage

VCEO

IC=10mA,IB=0

>32

>45

V

Emitter-Base Voltage

VEBO

IE=1uA, IC=0

>7.0

>7.0

V

Collector-Cut off Current

ICES

VCE=32V, VBE=0

<10

-

nA

VCE=45V, VBE=0

-

<10

nA

Ta=150deg C

VCE=32V, VBE=0

<10

-

uA

VCE=45V, VBE=0

-

<10

uA

Ta=100deg C

ICEX

VCE=32V, VBE=0.2V

<20

-

uA

VCE=45V, VBE=0.2V

-

<20

uA

Emitter-Cut off Current

IEBO

VEB=5V, IC=0

AII

<10

nA

DC Current Gain

hFE

IC=10uA,VCE=5V

BCY58-7/59-7

-

BCY58-8/59-8

>20

BCY58-9/59-9

>40

BCY58-10/59-10

>100

IC=2mA,VCE=5V

BCY58-7/59-7

120-220

BCY58-8/59-8

180-310

BCY58-9/59-9

250-460

BCY58-10/59-10

380-630

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company