STF20NM65N datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STP20NM65N, STF20NM65N

Electrical ratings

Doc ID 13845 Rev 2

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VDS

Drain source voltage

650

VGS

Gate source voltage

± 25

Drain current continuous TC =25 °C

15(1)

Limited only by maximum temperature allowed.

Drain current continuous TC =100 °C

9.45

IDM

(2)

Pulse width limited by safe operating area.

Drain current pulsed

PTOT

Total dissipation at TC=25 °C

125

dv/dt (3)

ISD ≤15 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80 % V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heatsink

(t=1 s; TC = 25 °C)

2500

Tstg

Storage temperature

Max. operating junction temperature

-55 to 150

150

°C

Table 3.

Thermal data

Symbol

Parameters

Value

Unit

TO-220

TO-220FP

Rthjc

Thermal resistance junction-case max.

4.17

°C/W

Rthja

Thermal resistance junction-ambient

max.

62.50

°C/W

Max. lead temperature for soldering

purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameters

Value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy (starting

TJ = 25 °C, ID = IAR, VDD = 50 V)

115

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