STF20NM65N datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STP20NM65N, STF20NM65N

4/16

Doc ID 13845 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

650

lDSS

Zero gate voltage drain

current (VGS=0)

VDS = max rating

VDS = max rating @ 125 °C

100

µA

lGSS

Gate body leakage

(VDS=0)

VGS= ±25 V, VDS=0

100

VGS(th)

Gate threshold voltage

ID = 250 µA,

VGS =VDS

RDS(on)

Static drain-source on

resistance

ID=7.5 A, VGS=10 V

0.250 0.270

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse capacitance

VDS = 50 V, f = 1MHz, VGS = 0

1280

110

Coss eq

(1)

Coss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80 % VDSS.

Equivalent output

capacitance

VDS = 0 to VGS = 0

260

Intrinsic gate resistance

f = 1MHz open drain

4.8

Ω

Qgs

Qgd

Total gate charge

Gate source charge

Gate-drain charge

VDD = 520 V, ID = 15 A,

VGS = 10 V

(see

Figure 16)

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 325 V, ID=7.5 A

Rg=4.7 Ω,

VGS=10 V

(see

Figure 15)

(see

Figure 20)

13.5

td(off)

Turn-off-delay time

Fall time

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