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STF20NM65N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF20NM65N
Description  N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF20NM65N Datasheet(HTML) 5 Page - STMicroelectronics

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STP20NM65N, STF20NM65N
Electrical characteristics
Doc ID 13845 Rev 2
5/16
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source drain current
Source drain current
(pulsed)
-
15
60
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
Forward on voltage
ISD = 15 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 15 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17)
-
455
ns
Qrr
Reverse recovery charge
5.5
nC
IRRM
Reverse recovery current
24.5
A
trr
Reverse recovery time
ISD =15 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see
Figure 17)
-
710
ns
Qrr
Reverse recovery charge
8
nC
IRRM
Reverse recovery current
24
A



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