Power Transistor

RT230PD

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 5.2

Product Features

Applications

• 50 ~ 4000 MHz

• 18dB Gain@900MHz

• 34.5dBm P1dB@900MHz

• 47dBm Output IP3

• GaAs HFET

• CDMA,W-CDMA Medium Power Amplifier

• High Linearity Drive Amplifier

• ISM

• MMDS

• Wi-Fi, Wi-Max

Description

The RT230PD is designed for base stations and cell extenders and operating frequency range is from 50 ~ 4000MHz.

RT230PD is GaAs HFET in SP-12 type package which has superior performance against the heat at high temperature for its high

reliability. It also has high efficiency, high gain and has a strong advantage using it as drive device at high frequency.

RT230PD is 100% RF&DC tested.

Electrical Specifications

PARAMETER

UNIT

TYPICAL

Frequency Range

MHz

900

1900

2600

Gain

dB

18

16.5

14.5

Input Return Loss

dB

-15

-20

-20

Output IP3

dBm

47

47

47

1dB Compression Point

dBm

34.5

34.5

34

Channel Power

dBm

27.5

25.5

-

Noise Figure

dB

2.5

2.5

3.0

DC Current

mA

450

450

450

Supply Voltage

VDC

9

9

9

* OIP3 is measured with two tones, at an output power of 20dBm/tone separated by 1MHz

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Drain to Source Voltage

V

12

Vds

Gate to Source Voltage Range

V

0 ~ -5.0

Vgs

Power Dissipation

W

7.5

Pt

Storage Temperature

℃

-65 ~ 175

Tstg

Channel Temperature

℃

175

Tch

Package Type : SP-12