DRV8301 datasheet(21/28 Pages) TI1

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DRV8301

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SLOS719B – AUGUST 2011 – REVISED AUGUST 2013

Over Current Adjustment

When external MOSFET is turned on, the output current flows the MOSFET, which creates a voltage drop VDS.

The overcurrent protection event will be enabled when the VDS exceeds a pre-set value IOC. The OC tripped

value can be programmed through SPI command. Assuming the on resistance of MOSFET is RDS(on), the Vds

can be calculated as:

VDS = IOC × RDS(on)

VDS is measured across the SL_x and SH_x pins for the low-side MOSFET. For the high-side MOSFET, VDS is

measured across PVDD1 (internally) and SH_x. Therefore, it is important to limit the ripple on the PVDD1 supply

for accurate high-side current sensing.

It is also important to note that there can be up to a 20% tolerance across channels for the OC trip point. This is

meant for protection and not to be used for regulating current in a motor phase.

Table 9. OC_ADJ_SET Table

Control Bit (D6–D10) (0xH)

Vds (V)

0.060

0.068

0.076

0.086

0.097

0.109

0.123

0.138

Control Bit (D6–D10) (0xH)

Vds (V)

0.155

0.175

0.197

0.222

0.250

0.282

0.317

0.358

Control Bit (D6–D10) (0xH)

Vds (V)

0.403

0.454

0.511

0.576

0.648

0.730

0.822

0.926

Code Number (0xH)

Vds (V)

1.043

1.175

1.324

1.491

1.679(1)

1.892(1)

2.131(1)

2.400(1)

(1)

Do not use settings 28, 29, 30, 31 for VDS sensing if the IC is expected to operate in the 6V – 8V range.

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