©

1997,1999

MOS FIELD EFFECT TRANSISTOR

2SK3055

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D13094EJ1V0DS00 (1st edition)

Date Published

March 1999 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low On-State Resistance

• Built-in Gate Protection Diode

• Isolated TO-220 package

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Gate to Source Voltage

+20,

−10

V

Drain Current (DC)

±30

A

Drain Current (Pulse)

Note1

±100

A

25

W

2.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Single Avalanche Current

Note2

15

A

Single Avalanche Energy

Note2

22.5

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1 %

→ 0 V

THERMAL RESISTANCE

Channel to Case

5.0

°C/W

Channel to Ambient

62.5

°C/W

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3055

Isolated TO-220