K3055 datasheet(2/8 Pages) NEC

2 / 8 page

Data Sheet D13094EJ1V0DS00

2SK3055

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain to Source On-state Resistance

RDS(on)1

VGS = 10 V, ID = 15 A

Ω

RDS(on)2

VGS = 4.0 V, ID = 15 A

Ω

Gate to Source Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.0

1.6

2.0

Forward Transfer Admittance

| yfs |VDS = 10 V, ID = 15 A

8.0

Drain Leakage Current

IDSS

VDS = 60 V, VGS = 0 V

µA

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±10

µA

Input Capacitance

Ciss

VDS = 10 V

920

Output Capacitance

Coss

VGS = 0 V

280

Reverse Transfer Capacitance

Crss

f = 1 MHz

120

Turn-on Delay Time

td(on)

ID = 15 A

Rise Time

VGS(on) = 10 V

300

Turn-off Delay Time

td(off)

VDD = 30 V

Fall Time

RG = 10

Ω

120

Total Gate Charge

ID = 30 A

Gate to Source Charge

QGS

VDD = 48 V

3.3

Gate to Drain Charge

QGD

VGS(on) = 10 V

7.0

Body Diode Forward Voltage

VF(S-D)

IF = 30 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

If = 30 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs60

TEST CIRCUIT 3 GATE CHARGE

VGS = 20

→ 0 V

PG.

RG = 25

Ω

D.U.T.

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

RG = 10

Ω

D.U.T.

VDD

TEST CIRCUIT 2 SWITCHING TIME

PG.

IG = 2 mA

Ω

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

τ = 1 µs

Duty Cycle

≤ 1 %

VGS

Wave Form

VGS

10 %

90 %

VGS(on)

ton

toff

td(on)

td(off)

10 %10 %

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