2N685 datasheet(4/6 Pages) MICROSEMI

4 / 6 page

T4-LDS-0249, Rev. 1 (120183)

Page 4 of 6

2N682, 2N683, 2N685 – 2N692

and 2N5206

ELECTRICAL CHARACTERISTICS (continued)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Reverse blocking current (TC = +120 ºC)

AC method, bias condition D;

f = 60 Hz; VRRM = rated

IRRM2

mA (pk)

Forward blocking current (TC = +120 ºC)

AC method, bias condition D;

f = 60 Hz; VDRM = rated

IDRM2

mA (pk)

Gate trigger voltage (TC = +120 ºC; Re = 20

max)

V2 = VDM = 50 V; RL

= 140 Ω

V2 = VDM = 100 V; RL

= 140 Ω

V2 = VDM = 200 V; RL

= 140 Ω

V2 = VDM = 250 V; RL

= 650 Ω

V2 = VDM = 300 V; RL

= 650 Ω

V2 = VDM = 400 V; RL

= 3 k Ω

V2 = VDM = 500 V; RL

= 3 k Ω

V2 = VDM = 600 V; RL

= 3 k Ω

V2 = VDM = 700 V; RL

= 3 k Ω

V2 = VDM = 800 V; RL

= 3 k Ω

V = V

= 1 000 V; R

= 3 k Ω

2N682

2N683

2N685

2N686

2N687

2N688

2N689

2N690

2N691

2N692

2N5206

VGT2

.25

Reverse blocking current (TC = -65 ºC)

AC method, bias condition D;

f = 60 Hz; VRRM = rated

IRRM3

mA (pk)

Forward blocking current (TC = -65 ºC)

AC method, bias condition D;

f = 60 Hz; VDRM = rated

IDRM3

mA (pk)

Gate trigger voltage and current (TC = -65 ºC)

V2 = VD = 6 V; RL

= 50 Ω;

= 20 Ω maximum

VGT3

IGT2

Exponential rate of voltage rise

Bias condition D; TC = +120°C minimum,

dv/dt = 25 v/μs; repetition rate = 60 pps;

test duration = 15 s;

C = 1.0 μF; R

= 50 Ω

VAA = 50 V

VAA = 100 V

VAA = 200 V

VAA = 250 V

VAA = 300 V

VAA = 400 V

VAA = 500 V

VAA = 600 V

VAA = 700 V

VAA = 800 V

VAA = 1,000 V

2N682

2N683

2N685

2N686

2N687

2N688

2N689

2N690

2N691

2N692

2N5206

190

240

285

380

475

570

665

760

950

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