2N685 datasheet(5/6 Pages) MICROSEMI

5 / 6 page

T4-LDS-0249, Rev. 1 (120183)

Page 5 of 6

2N682, 2N683, 2N685 – 2N692

and 2N5206

ELECTRICAL CHARACTERISTICS (continued)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Circuit-commutated turn-off time

TC = +120°C minimum; ITM = 10 A;

ton

= 100 ±50 μs; di/dt = 5 A/μs minimum;

di/dt = 8 A/μs maximum; reverse voltage at t

1 = 15 V minimum;

repetition rate = 60 pps maximum; di/dt = 20 V/μs;

gate bias conditions; gate source voltage = 0 V;

gate source resistance = 100 Ω

VDM = VDRM = 50 V (pk); VRRM = 50 V maximum

VDM = VDRM = 100 V (pk); VRRM = 100 V maximum

VDM = VDRM = 200 V (pk); VRRM = 200 V maximum

VDM = VDRM = 250 V (pk); VRRM = 250 V maximum

VDM = VDRM = 300 V (pk); VRRM = 300 V maximum

VDM = VDRM = 400 V (pk); VRRM = 400 V maximum

VDM = VDRM = 500 V (pk); VRRM = 500 V maximum

VDM = VDRM = 600 V (pk); VRRM = 600 V maximum

VDM = VDRM = 700 V (pk); VRRM = 700 V maximum

VDM = VDRM = 800 V (pk); VRRM = 800 V maximum

VDM = VDRM = 1,000 V (pk); VRRM = 1,000 V max.

2N682

2N683

2N685

2N686

2N687

2N688

2N689

2N690

2N691

2N692

2N5206

toff

µs

Gate controlled turn-on time

VAA = 50 V for 2N682

VAA = 100 V for 2N683, 2N685 through 2N692

and 2N5206

ITM = 10 A; VGG = 10 V; Re = 25

tp1

= 15 ±5 μs; 4 A/μs ≤ di/dt ≤ 200 A/μs.

2N682,

2N683,

2N685

through

2N692 and

2N5206

ton

µs

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