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2SC4807 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC4807 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 8 page ![]() 2SC4807 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 20 V Collector to emitter voltage V CEO 15 V Emitter to base voltage V EBO 2V Collector current I C 200 mA Collector power dissipation P C* 1 800 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 20 30 — V I C = 10 µA, IE = 0 Collector cutoff current I CBO —— 1 µAV CB = 15 V, IE = 0 I CEO —— 1 mA V CE = 15 V, RBE = ∞ Emitter cutoff current I EBO —— 10 µAV EB = 2 V, IC = 0 DC current transfer ratio h FE 50 120 250 V CE = 5 V, IC = 100 mA Collector output capacitance Cob — 2.8 4.0 pF V CB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product f T 3.0 4.4 — GHz V CE = 5 V, IC = 100 mA Power gain PG 5.0 7.0 — dB V CE = 5 V, IC = 100 mA, f = 900 MHz Noise figure NF — 2.5 4.0 dB V CE = 5 V, IC = 20 mA, f = 900 MHz Note: Marking is “ER”. |
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