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HT27LC020 Datasheet(PDF) 6 Page - Holtek Semiconductor Inc |
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HT27LC020 Datasheet(HTML) 6 Page - Holtek Semiconductor Inc |
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6 / 15 page ![]() HT27LC020 Rev. 1.50 6 December 8, 2003 Read Mode The HT27LC020 has two control functions, both of which must be logically satisfied in order to obtain data at outputs. Chip Enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and should be used to gate data to the output pins, independent of device selection. As- suming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the outputs (tOE) after the falling edge of OE, assuming the CE has been LOW and addresses have been stable for at least tACC -tOE. Standby Mode The HT27LC020 has CMOS standby mode which re- duces the maximum VCC current to 10 mA. It is placed in CMOS standby when CE is at VCC ±0.3V. The HT27LC020 also has a TTL-standby mode which re- duces the maximum VCC current to 0.6mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, inde- pendent of the OE input. Two-line Output Control Function To accommodate multiple memory connections, a two-line control function is provided to allow for: · Low memory power dissipation · Assurance that output bus contention will not occur It is recommended that CE be decoded and used as the primary device-selection function, while OE be made a common connection to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device. System Considerations During the switch between active and standby condi- tions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the out- put capacitance loading of the device. At a minimum, a 0.1 mF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VPP to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM ar- rays, a 4.7 mF bulk electrolytic capacitor should be used between VCC and VPP for each eight devices. The lo- cation of the capacitor should be close to where the power supply is connected to the array. O E A d d r e s s A d d r e s s V a l i d t C E t O E t A C C H I G H Z O u t p u t V a l i d t O H t D . O u t p u t C E Figure 1. A.C. Waveforms for Read Operation |
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