5-24

ATF-10136 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Drain-Source Voltage

V

+5

Gate-Source Voltage

V

-4

Gate-Drain Voltage

V

-7

Drain Current

mA

mW

430

Channel Temperature

°C

175

°C

-65to+175

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

3. Derate at 2.9 mW/

°C for

4. Storage above +150

°C may tarnish

the leads of this package making it

difficult to solder into a circuit.

After a device has been soldered

into a circuit, it may be safely

stored up to 175

°C.

5. The small spot size of this tech-

nique results in a higher, though

more accurate determination of

θ

jc

than do alternate methods. See

APPLICATIONS PRIMER IIIA for

more information.

ATF-10136 Typical Performance, T

Thermal Resistance :

θ

Liquid Crystal Measurement:

1

Freq.

Γ

opt

GHz

dB

Mag

Ang

0.5

0.35

0.93

12

0.80

1.0

0.4

0.85

24

0.70

2.0

0.4

0.70

47

0.46

4.0

0.5

0.39

126

0.36

6.0

0.8

0.36

-170

0.12

8.0

1.1

0.45

-100

0.38

Part Number Ordering Information

Part Number

Devices Per Reel

Reel Size

ATF-10136-TR1

1000

7"

ATF-10136-STR

10

STRIP

For more information, see “Tape and Reel Packaging for Semiconductor Devices.”

FREQUENCY (GHz)

Figure 2. Optimum Noise Figure and

020

10

40

50

30

60

Figure 3. Insertion Power Gain,

Maximum Available Gain and

Maximum Stable Gain vs. Frequency.

FREQUENCY (GHz)

2.0

1.5

1.0

0.5

0

18

15

12

9

6

16

14

12

10

2.0

6.0

4.0

8.0 10.0 12.0

1.5

1.0

0.5

0

MSG

MAG

0.5

1.0

2.0

4.0

6.0 8.0 12.0

30

25

20

15

10

5

0

Figure 1. Optimum Noise Figure and

Associated Gain vs. Frequency.