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STL8N65M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL8N65M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 13 page ![]() STL8N65M5 Electrical characteristics Doc ID 019013 Rev 3 7/13 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Switching losses vs gate resistance (1) Figure 13. Normalized BVDSS vs temperature 1. Eon including reverse recovery of a SiC diode C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM08202v1 Eoss 1.5 1.0 0.5 0 0 100 VDS(V) (µJ) 400 2.0 200 300 2.5 3.0 500 600 3.5 AM08201v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM08204v1 RDS(on) 2.0 1.5 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 1.0 ID=3.5A VGS=10V AM08205v1 E 100 10 1 0 20 RG( Ω) ( µJ) 10 30 40 ID=4A VCL=400V VGS=10V Eon Eoff AM08206v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM08203v1 |
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