STL8N65M5 datasheet(3/13 Pages) STMICROELECTRONICS

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STL8N65M5

Electrical ratings

Doc ID 019013 Rev 3

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

4.4

(2)

When mounted on FR-4 board of inch², 2oz Cu

Drain current (continuous) at Tamb = 25 °C

1.4

(2)

Drain current (continuous) at Tamb = 100 °C

0.6

IDM

(2),(3)

Pulse with limited by safe operating area.

Drain current (pulsed)

5.6

PTOT

(2)

Total dissipation at Tamb = 25 °C

2.5

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

120

dv/dt (4)

ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.78

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

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