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STL51N3LLH5 Datasheet(PDF) 4 Page - STMicroelectronics |
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STL51N3LLH5 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Electrical characteristics STL51N3LLH5 4/13 Doc ID 022062 Rev 1 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 250 µA 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V TC=125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±22/-20 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 2.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6.3 A VGS= 4.5 V, ID= 6.3 A 0.0105 0.0145 0.0145 0.0175 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 724 132 20 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 12.6 A VGS =4.5 V Figure 14 - 5 2 2 - nC nC nC |
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