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STL51N3LLH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL51N3LLH5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STL51N3LLH5 Electrical characteristics Doc ID 022062 Rev 1 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 6.3 A, RG=4.7 Ω, VGS= 4.5 V Figure 13 - 4 4.2 2.1 3.5 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 12.6 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 50.4 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 12.6 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12.6 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C - 21 10 1 ns nC A |
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