IDT6116LA55DB datasheet(2/11 Pages) IDT

2 / 11 page

IDT6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and In dustrial Temperature Ranges

Pin Configurations

Absolute Maximum Ratings(1)

Truth Table(1)

Pin Description

Capacitance (TA = +25°C, f = 1.0 MHZ)

DIP/SOIC/SOJ

Top View

3089 drw 02

GND

P24-2

P24-1

D24-2

D24-1

SO24-2

SO24-4

A 3

I/O 0

I/O 1

VCC

A10

I/O5

I/O4

A 7

I/O7

I/O6

I/O 2

I/O3

NOTE:

1. This parameter is determined by device characterization, but is not production

tested.

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

CI/O

I/O Capacitance

VOUT = 0V

3089 tbl 03

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

2. VTERM must not exceed VCC +0.5V.

Symbol

Rating

Com'l.

Mil.

Unit

VTERM

(2)

Terminal Voltage

with Respect

to GND

-0.5 to +7.0

Operating

Temperature

0 to +70

-55 to +125

TBIAS

Temperature

Under Bias

-55 to +125

-65 to +135

TSTG

Storage Temperature

-55 to +125

-65 to +150

Power Dissipation

1.0

IOUT

DC Output Current

3089 tbl 04

Name

Description

A0 - A10

Address Inputs

I/O0 - I/O7

Data Input/Output

Chip Select

Write Enable

Output Enable

VCC

Power

GND

Ground

3089 tbl 01

NOTE:

1. H = VIH, L = VIL, X = Don't Care.

Mode

I/O

Standby

High-Z

Read

DATAOUT

Read

High-Z

Write

DATAIN

3089 tbl 02

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