FDS89161 datasheet(1/5 Pages) KEXIN

Part #	FDS89161

Description	N-Channel Enhancement MOSFET

PDF	5 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel Enhancement MOSFET

FDS89161 (KDS89161)

■

Features

●

VDS (V) = 100V

●

ID = 2.7 A

●

RDS(ON) ＜ 105mΩ (VGS = 10V)

●

RDS(ON) ＜ 160mΩ (VGS = 4.5V)

●

CDM ESD Protection Level > 2KV typical

High performance trench technology for extremely low rDS(on)

atings Ta = 25

G2

S1

G1

S2

D2

D1

4

3

2

1

5

6

7

8

Q2

Q1

■

Absolute Maximum Ratings Ta = 25℃

Symbol

Rating

Unit

VDS

100

VGS

±20

Continuous

2.7

Pulsed

15

EAS

13

mJ

31

1.6

RthJA

78

RthJC

4

TJ

150

Tstg

-55 to 150

Junction Temperature

Storage Temperature Range

PD

W

Power Dissipation

℃

/W

℃

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

V

Single Pulse Avalanche Energy

(Note1)

Parameter

Continuous Drain Current

ID

Drain-Source Voltage

Gate-Source Voltage

A

Note 1.Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V.

2. 78°C/W when mounted on a 1 in2pad of 2 oz coppe

Tc=25℃

Ta=25℃

SOP-8

1.50 0.15

Similar Part No. - FDS89161

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	FDS89161	266Kb / 6P	Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓
Fairchild Semiconductor	FDS89161LZ	251Kb / 7P	Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A
ON Semiconductor	FDS89161LZ	399Kb / 8P	Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ September 2015 Rev. 1.2

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FDS89161 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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