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FDS89161 Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Part # FDS89161
Description  N-Channel Enhancement MOSFET
PDF  5 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDS89161 Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

  FDS89161 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd FDS89161 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd FDS89161 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd FDS89161 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd FDS89161 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
4
MOSFET
.
N-Channel Enhancement MOSFET
FDS89161 (KDS89161)
■
Typical Characterisitics
Figure 7.
0
1
2
3
4
5
0
2
4
6
8
10
ID = 2.7 A
VDD = 50 V
VDD = 25 V
Qg, GATE CHARGE (nC)
VDD = 75 V
Gate Charge Characteristics
Figure8.
0.1
1
10
100
1
10
100
400
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
CapacitancevsDrain
to Source Voltage
Figure9.
0.01
0.1
1
2
1.0
1.5
2.0
2.5
3.0
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
UnclampedInductive
Switching Capability
Figure 10.
25
50
75
100
125
150
0
1
2
3
4
VGS = 6 V
RθJA = 78
oC/W
VGS = 10 V
T
A, Ambient TEMPERATURE (
oC)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11. Gate Leakage Current vs
Gate to Source Voltage
0
5
10
15
20
25
30
35
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
VDS = 0 V
TJ = 25 oC
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 12.
0.1
1
10
100
400
0.005
0.01
0.1
1
10
20
10 s
100 us
10 ms
DC
1 s
100 ms
1 ms
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 135
oC/W
TA = 25
oC
Forward Bias Safe
Operating Area



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