FDS89161 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

N-Channel Enhancement MOSFET

FDS89161 (KDS89161)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

100

Breakdown Voltage Temperature

coefficient

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage Current

IGSS

Gate Threshold Voltage

VGS(th)

1.7

2.2

Gate to Source Threshold Voltage

Temperatture Coefficient

105

110

160

140

182

Forward Transconductance

gFS

7.8

Input Capacitance

Ciss

227

302

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

0.9

VGS=0 to 10V

3.8

5.3

VGS=0 to 5V

2.1

2.9

Gate Source Charge

Qgs

0.7

Gate Drain Charge

Qgd

0.7

Turn-On DelayTime

td(on)

3.8

Turn-On Rise Time

1.2

Turn-Off DelayTime

td(off)

9.5

Turn-Off Fall Time

1.6

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

0.8

1.3

0.8

1.2

Test Conditions

Diode Forward Voltage (Note 1)

VSD

IS=2.7A,VGS=0V

IS=2A,VGS=0V

VDS=10V, ID=2.7A

VGS=0V, VDS=50V, f=1MHz

ID=250μA, VGS=0V

ID=250μA, referenced to 25℃

VDS=80V, VGS=0V

VDS=0V, VGS=±20V

mV/℃

△

VGS(th)△TJ

-6

mV/℃

VDS=VGS , ID=250μA

ID=250μA, referenced to 25℃

△

VDSS/△TJ

VGS=10V, VDS=50V, ID=2.7A,RGEN=6Ω

mΩ

RDS(On)

Static Drain-Source On-Resistance

Total Gate Charge

VGS=10V, ID=2.7A

VGS=4.5V, ID=2.1A

VGS=10V, ID=2.7A TJ=125℃

VDS=50V, ID=2.7A

IF= 2.7A, dI/dt= 100A/μs

Note 1.Pulse Width < 300μs, Duty cycle < 2.0%.

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