ADN2849

Rev. Pr. G | Page 2 of 17

Specifications

Table 1.

Parameter

Min

Typ

Max

Unit

Conditions

Bias Offset Voltage(MODP)

Bias offset voltage

-0.25

-2.0

V

Note 1

BIAS_SET voltage to bias offset voltage gain

0.9

1.1

V/V

Bias offset voltage drift over temperature and VEE

-5

5

%

Modulation Voltage(MODP)

Modulation voltage swing

0.6

3.0

V

Note1

MOD_SET voltage to modulation voltage swing gain

1.5

1.9

V/v

Modulation voltage drift over temperature and VEE

-5

5

%

Back termination resistance

40

60

Ω

Rise time (20% - 80%)

27

36

ps

Fall time (20% - 80%)

27

36

ps

Random jitter

0.75

ps RMS

Total jitter

10

Cross point adjust range

30

85

%

Cross point drift over temperature and VEE

-5

5

%

Minimum output voltage(single ended)

VEE+1.7

V

Note1

-8

dB

At 10GHz

Modulation enable time

100

ns

Modulation disable time

100

ns

Data Inputs (DATAP, DATAN)

Differential Input voltage

600

1600

Termination resistance

40

60

Ω

Setup time (see figure 2)

25

ps

CLK_SELB=’0’

Hold time (see figure 2)

25

ps

CLK_SELB=’0’

-10

DB

At 10GHz

Clock Inputs (CLKP, CLKN)

Differential Input voltage

600

1600

Termination resistance

40

60

Ω

-10

dB

At 10GHz

Cross point adjust (CPAN, CPAP)

Input voltage range

-0.85

-1.85

V

CPAP, CPAN differential voltage

0.6

Input current

85

115

µA

Logic Inputs (MOD_ENB, CLK_SELB)

VEE+2

V

VEE+0.8

V

-400

µA

20

µA

200

µA

Supply

VEE

-4.75

-5.2

-5.5

V

IMOD=0

52

mA

Notes:

Minimum supply voltage and minimum output voltage determine maximum output swing and maximum bias offset that can be achieved concurrently.

Measured using the characterization circuit shown in figure 3.

Preliminary Technical Data