RFP60P03 datasheet(2/7 Pages) INTERSIL

2 / 7 page

4-141

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFG60P03, RFP60P03, RFS60P03SM

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

-30

Drain to Gate Voltage, (Rgs = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-30

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figure 6

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

176

1.17

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 11)

-30

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 10)

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-1

µA

VDS = 0.8 x Rated BVDSS, TC = 150

-50

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 60A, VGS = 10V

0.027

Ω

Turn-On Time

tON

VDD = 15V, ID ≈ 60A, RL = 0.25Ω,

VGS = -10V, RG = 2.5Ω,

(Figure 13)

140

Turn-On Delay Time

td(ON)

-20

Rise Time

-75

Turn-Off Delay Time

td(OFF)

-35

Fall Time

-40

Turn-Off Time

tOFF

115

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V

VDD = -24V, ID ≈ 60A,

RL = 0.4Ω

Ig(REF) = -3mA

190

230

Gate Charge at 10V

Qg(-10)

VGS = 0 to -10V

100

120

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

7.5

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 12)

3000

Output Capacitance

COSS

1500

Reverse Transfer Capacitance

CRSS

525

Thermal Resistance, Junction to Case

RθJC

(Figure 3)

0.85

oC/W

Thermal Resistance, Junction to Ambient

RθJA

TO-220AB, TO- 263AB

oC/W

TO-247

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = -60A

-1.75

Diode Reverse Recovery Time

trr

ISD = -60A, dISD/dt = 100A/µs

200

NOTE:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

RFG60P03, RFP60P03, RF1S60P03SM

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