RFP7N40 datasheet(2/4 Pages) INTERSIL

2 / 4 page

5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFM7N35

RFM7N40

RFP7N35

RFP7N40

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

350

400

350

400

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . VDGR

350

400

350

400

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

100

Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.8

0.6

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

RFM7N35, RFP7N35

350

RFM7N40, RFP7N40

400

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 8)

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, TC = 25

oC-

µA

VDS = 0.8 x Rated BVDSS, TC = 125

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 7A, VGS = 10V (Figures 6, 7)

0.75

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 7A, VGS = 10V

5.25

Turn-On Delay Time

td(ON)

VDS = 200V, ID ≈ 3.5A, RG = 50Ω,

RL = 56Ω, VGS = 10V

(Figures 10, 11, 12)

-16

Rise Time

-54

Turn-Off Delay Time

td(OFF)

170

250

Fall Time

100

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 9)

1600

Output Capacitance

COSS

300

Reverse-Transfer Capacitance

CRSS

200

Thermal Resistance Junction to Case

RθJC

RFM7N35, RFM7N40

1.25

oC/W

RFP7N35, RFP7N40

1.67

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 7A

1.4

Reverse Recovery Time

trr

ISD = 7A, dISD/dt = 100A/µs

870

NOTES:

2. Pulse Test: Pulse Width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFM7N35, RFM7N40, RFP7N35, RFP7N40

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