DATA SHEET

DESCRIPTION

The

NE68019 / 2SC5008 is an NPN epitaxial silicon transistor

designed for use in low noise and small signal amplifiers from VHF

band to L band.

Low noise figure, high gain, and high current

capability achieve a very wide dynamic range and excellent linearity.

This is achieved by direct nitride passivated base surface, process

(NEST2 process) which is a proprietary fabrication technique.

FEATURES

•

Low Voltage Use.

•

•

•

•

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

NE68019-A

2SC5008

-A

50 pcs./Unit

NE68019-T-A

2SC5008-T

-A

3 kpcs./Reel

*

To order evaluation samples, please contact your nearby sales office.

Unit sample quantity shall be 50 pcs.

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

125 mW

Junction Temperature

150

˚ C

Storage Temperature

–65 to + 150

˚ C

SILICON TRANSISTOR

Document No. P10387EJ2V0DS00 (2nd edition)

(Previous No. TD-2433)

Date Published July 1995 P

NE68019 / 2SC5008

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

1.6 ± 0.1

0.8 ± 0.1

2

1

3

PACKAGE DIMENSIONS

in millimeters

1. Emitter

2. Base

3. Collector

JEITA

Part No.