IRFDC20 datasheet(2/8 Pages) IRF

2 / 8 page

Parameter

Min. Typ. Max. Units Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

600

—

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

—

0.88

—

V/°C

Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

—

4.4

Ω

VGS = 10.0V, ID = 0.19A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.4

—

VDS = 50V, ID = 1.3A

IDSS

Drain-to-Source Leakage Current

—

VDS = 600V, VGS = 0V

—

250

VDS = 480V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

—

100

VGS = 20V

Gate-to-Source Reverse Leakage

—

-100

VGS = -20V

Total Gate Charge

—

ID = 2.0A

Qgs

Gate-to-Source Charge

—

3.0

VDS = 360V

Qgd

Gate-to-Drain ("Miller") Charge

—

8.9

VGS = 10V

td(on)

Turn-On Delay Time

—

VDD = 300V

Rise Time

—

ID = 2.0A

td(off)

Turn-Off Delay Time

—

RG = 18Ω

Fall Time

—

RD = 150Ω

Internal Drain Inductance

—

4.0

—

Between lead,

6mm (0.25in.)

Internal Source Inductance

—

6.0

—

from package

and center of

die contact

Ciss

Input Capacitance

—

350

—

VGS = 0V

Coss

Output Capacitance

—

VDS = 25V

Crss

Reverse Transfer Capacitance

—

8.6

—

ƒ = 1.0MHz

IRFDC20

Notes:

Parameter

Min. Typ. Max. Units Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

—

1.6

TJ = 25°C, IS = 0.32A, VGS = 0V

trr

Reverse Recovery Time

—

290

580

TJ = 25°C, IF = 2.0A

Qrr

Reverse RecoveryCharge

—

0.67

1.3

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Repetitive rating; pulse width limited by

max. junction temperature.

VDD = 50V, starting TJ = 25°C, L = 54mH

RG = 25Ω, IAS = 1.3A.

ISD ≤ 4.4A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width

≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

—

2.6

—

0.32

µA

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