IRFM260

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

—

—

V

VGS =0 V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.24

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.060

VGS = 10V, ID = 28A

On-State Resistance

—

—

0.068

Ω

VGS = 10V, ID = 35A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

22

—

—

S ( )VDS > 15V, IDS = 28A „

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 0.8 x Max Rating,VGS=0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20 V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

230

VGS = 10V, ID = 35A

Qgs

Gate-to-Source Charge

—

—

40

nC

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

110

Turn-On Delay Time

—

—

29

VDD = 100V, ID = 35A,

tr

Rise Time

—

—

120

RG = 2.35Ω

Turn-Off Delay Time

—

—

110

tf

Fall Time

—

—

92

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

5100

—

VGS = 0V, VDS = 25 V

Coss

Output Capacitance

—

1100

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

280

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

35*

ISM

Pulse Source Current (Body Diode)



—

—

180

VSD

Diode Forward Voltage

—

—

1.8

V

trr

Reverse Recovery Time

—

—

420

ns

Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

4.9

µCVDD ≤ 50V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.50

RthCS

Case-to-Sink

—

0.21

—

K/W

RthJA

Junction-to-Ambient

—

—

48

Typical socket mount

nA

„

nH

ns

Measuredfromdrainlead,

6mm(0.25in)frompackage

to center of die.

Measuredfromsourcelead,

6mm(0.25in)frompackage

tosourcebondingpad.

ModifiedMOSFETsymbolshow-

ingtheinternalinductances.

µA

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