IRHM7064 datasheet(3/4 Pages) IRF

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Table 2. High Dose Rate

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

—

Applied drain-to-source voltage

during gamma-dot

IPP

—

140

—

140

—

Peak radiation induced photo-current

di/dt

—

800

—

160

—

A/µsec Rate of rise of photo-current

0.1

—

0.8

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

VDS Bias

VGS Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm2)

(ions/cm2)(

µm)

(V)

BVDSS

1 x 105

~41

-5

Radiation Performance of Rad Hard HEXFETs

IRHM7064, IRHM8064 Devices

Radiation Characteristics

Table 1. Low Dose Rate

IRHM7064

IRHM8064

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

min.

max.

min.

max.

BVDSS

Drain-to-Source Breakdown Voltage

100

—

100

—

VGS = 0V, ID = 1.0 mA

VGS(th)

GateThreshold Voltage

2.0

4.0

1.25

4.5

VGS = VDS, ID = 1.0 mA

IGSS

Gate-to-Source Leakage Forward

—

100

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

-100

—

-100

VGS = -20V

IDSS

Zero Gate Voltage Drain Current

—

µAVDS = 0.8 x Max Rating, VGS = 0V

RDS(on)1

Static Drain-to-Source

—

0.021

—

0.029

Ω

VGS = 12V, ID = 35A

On-State Resistance One

VSD

Diode Forward Voltage

—

3.0

—

3.0

TC = 25°C, IS = 35A,VGS = 0V

International Rectifier Radiation Hardened HEX-FETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier

uses two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of 12 volts per note 6 and a

VDSS bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 105 Rads (Si)

are identical and are presented in Table 1, column

1, IRHM7064. The values in Table 1 will be met for ei-

ther of the two low dose rate test circuits that are

used.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 105

Rads (Si), no change in limits are specified in DC pa-

rameters.

High dose rate testing may be done on a special re-

quest basis, using a dose rate up to 1 x 1012 Rads

(Si)/Sec.

International Rectifier radiation hardened HEXFETs

have been characterized in neutron and heavy ion

Single Event Effects (SEE) environments. Single

Event Effects characterization is shown in Table 3.

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