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AN2842 Datasheet(PDF) 11 Page - STMicroelectronics

Part # AN2842
Description  Paralleling of power MOSFETs in PFC topology
PDF  22 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2842 Datasheet(HTML) 11 Page - STMicroelectronics

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AN2842
Approach to the study
Doc ID 15110 Rev 1
11/22
2.2
Gate circuitry
Another reason for unbalanced current in a parallel topology is the gate circuitry. If a
common voltage source is used, the primary factor contributing to imbalance is mismatch
between decoupling resistors (if they are used). Normally, in order to reduce the impact of
the gate resistance, one can use different resistance for the drive gate circuit. In fact, if a
device with a lower Rgate brings more current than the other, its temperature increases and
consequently so does its RDS(on). This effect limits the current on the drain to source only
during the conduction operation. If we look at the previous paragraph, we can note that the
current imbalance is mainly present during the commutation and precisely during the
plateau zone. In order to reduce the current imbalance, it is necessary to decrease the
duration of the plateau by putting a resistor RG with a lower value. The impact of this
operation is oscillations on the gate pin, so the RG value is a compromise between speed of
the commutation and oscillations.
2.3
Influence of the boost diode in the current imbalance
Among the key factors that influence current imbalances is the boost diode. In fact, the
performance of this component are determinant during the turn-on operation of devices in a
parallel configuration. The most important of the diode's characteristics for this topology is
the recovery time (trr). In a PFC in boost topology, when the active device switches on, the
current that was flowing to the boost diode has to flow through the device. The current value
is made up of three components; the first is the current coming from the inductor, the second
is the current coming from the recovery of the diode, while the last is the current from the
output capacitances of the devices.
Figure 13. Contribution of the current spike value during the turn-on phase
So, the contribution to the current spike value during the turn-on phase is due also to the
intrinsic characteristics of the device. Even if devices with different Vth (around 500 mV)
values are used, during turn-on operation a bigger difference in the current value of the peak
is present if an ultra fast diode and a fast diode are used. In
Figure 14 and Figure 15, details
during turn-on are shown.



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