| Electronic Components Datasheet Search |
|
AN2842 Datasheet(PDF) 11 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN2842 Datasheet(HTML) 11 Page - STMicroelectronics |
|
11 / 22 page ![]() AN2842 Approach to the study Doc ID 15110 Rev 1 11/22 2.2 Gate circuitry Another reason for unbalanced current in a parallel topology is the gate circuitry. If a common voltage source is used, the primary factor contributing to imbalance is mismatch between decoupling resistors (if they are used). Normally, in order to reduce the impact of the gate resistance, one can use different resistance for the drive gate circuit. In fact, if a device with a lower Rgate brings more current than the other, its temperature increases and consequently so does its RDS(on). This effect limits the current on the drain to source only during the conduction operation. If we look at the previous paragraph, we can note that the current imbalance is mainly present during the commutation and precisely during the plateau zone. In order to reduce the current imbalance, it is necessary to decrease the duration of the plateau by putting a resistor RG with a lower value. The impact of this operation is oscillations on the gate pin, so the RG value is a compromise between speed of the commutation and oscillations. 2.3 Influence of the boost diode in the current imbalance Among the key factors that influence current imbalances is the boost diode. In fact, the performance of this component are determinant during the turn-on operation of devices in a parallel configuration. The most important of the diode's characteristics for this topology is the recovery time (trr). In a PFC in boost topology, when the active device switches on, the current that was flowing to the boost diode has to flow through the device. The current value is made up of three components; the first is the current coming from the inductor, the second is the current coming from the recovery of the diode, while the last is the current from the output capacitances of the devices. Figure 13. Contribution of the current spike value during the turn-on phase So, the contribution to the current spike value during the turn-on phase is due also to the intrinsic characteristics of the device. Even if devices with different Vth (around 500 mV) values are used, during turn-on operation a bigger difference in the current value of the peak is present if an ultra fast diode and a fast diode are used. In Figure 14 and Figure 15, details during turn-on are shown. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |