Conclusion

AN2842

20/22

Doc ID 15110 Rev 1

3

Conclusion

The analyses performed have shown some factors responsible for the current imbalance in

a parallel connection between two power MOSFETs. Some intrinsic parameters show a

current imbalance are differences between power circuit components, gate circuitry, the

influence of the boost diode and temperature imbalance between devices. In order to

develop a robust design the production spreads and the electrical and thermal behaviors of

the system must be taken into account.