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AN4337 Datasheet(PDF) 6 Page - STMicroelectronics

Part # AN4337
Description  power MOSFETs are considered rugged with respect to the avalanche
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4337 Datasheet(HTML) 6 Page - STMicroelectronics

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IAR and EAS electrical thermal approach
AN4337
6/14
DocID025012 Rev 1
3
IAR and EAS electrical thermal approach
The following section provides step-by-step guidelines on how to achieve the right trade-off
between performance and safety margin in terms of IAR and EAS specifications when a
MOSFET operates in a flyback converter. We essentially explain how to approach the
avalanche phenomenon in order to understand if a MOSFET device can function safely.
3.1
EAS power/thermal evaluations
The EAS single pulse avalanche rating in the datasheet is based on the assumption that the
device can sustain an avalanche if the starting case temperature is 25 °C and if a specific
value of ID is set.
The first step is to evaluate the maximum energy that the MOSFET must dissipate during
the single avalanche phenomenon. As previously mentioned, in the flyback converter, the
voltage spike across the drain-source of the MOSFET grows until the maximum V(BR)DSS is
reached. In the absence of an external clamping network, we estimate the amount of energy
Elk, due to the leakage inductance, dissipated in the power device.
Equation 1
Where
Equation 2
Equation 3
For example, consider the 650 V/5.4 A device shown below:
Table 1. Electrical rating, absolute maximum rating
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
650
V
ID
Drain current (continuous) at Tcase= 25⁰C
5.4
A
IAR
Avalanche current repetitive or not repetitive (pulsed width
limited by Tj max)
5.4
A
EAS
Single pulse avalanche energy (starting Tj=25⁰C, ID=IAR,
VDD=50V)
100
mJ
t
BVD
I
dt
t
Vds
t
Id
E
ss
P
t
lk
∆
⋅
⋅
=
=
∫
∆
0
2
1
)
(
)
(
N
V
BVD
I
L
t
out
ss
P
lk
−
⋅
=
∆
N
V
BVD
BVD
L
I
E
out
ss
ss
lk
P
lk
−
⋅
=
2
2
1



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