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AN4337 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AN4337
Description  power MOSFETs are considered rugged with respect to the avalanche
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4337 Datasheet(HTML) 1 Page - STMicroelectronics

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June 2014
DocID025012 Rev 1
1/14
AN4337
Application note
The avalanche issue: comparing the impacts
of the IAR and EAS parameters
By Vittorio Giuffrida
Introduction
Generally, power MOSFETs are considered rugged with respect to the avalanche
phenomenon, however, the quantification of the level of ruggedness depends on the IAR
avalanche current and EAS avalanche energy. These two parameters determine the capacity
of a MOSFET to be safe during the avalanche. This paper explores the theory of the
avalanche effect in a flyback converter, in order to understand how the IAR and EAS
parameters affect MOSFET operation and, consequently, how to manage a voltage
overshoot higher than the V(BR)DSS absolute maximum rating.
www.st.com


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