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AN4337 Datasheet(PDF) 1 Page - STMicroelectronics |
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AN4337 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() June 2014 DocID025012 Rev 1 1/14 AN4337 Application note The avalanche issue: comparing the impacts of the IAR and EAS parameters By Vittorio Giuffrida Introduction Generally, power MOSFETs are considered rugged with respect to the avalanche phenomenon, however, the quantification of the level of ruggedness depends on the IAR avalanche current and EAS avalanche energy. These two parameters determine the capacity of a MOSFET to be safe during the avalanche. This paper explores the theory of the avalanche effect in a flyback converter, in order to understand how the IAR and EAS parameters affect MOSFET operation and, consequently, how to manage a voltage overshoot higher than the V(BR)DSS absolute maximum rating. www.st.com |
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