KTC4511 datasheet(1/3 Pages) KEC

Part #	KTC4511

Description	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 3 page

2002. 6. 5

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTC4511

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

・Complementary to KTA1725.

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

1. BASE

2. COLLECTOR

3. EMITTER

TO-220IS

10.30 MAX

15.30 MAX

2.70±0.30

0.85 MAX

Φ

3.20±0.20

3.00±0.30

A

B

C

D

E

F

G

12.30 MAX

0.75 MAX

H

13.60±0.50

3.90 MAX

1.20

1.30

2.54

4.50±0.20

6.80

2.60±0.20

10°

J

K

L

M

N

O

P

Q

R

1

2

3

L

N

M

D

N

T

H

E

R

T

V

S

L

U

T

S

0.5

5°

25°

2.60±0.15

V

U

D

A

C

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification

R:55~110, O:80~160.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

6

A

Base Current

IB

3

A

Collector Power Dissipation (Tc=25℃)

PC

30

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=80V, IE=0

-

10

μA

Emitter Cut-off Current

IEBO

VEB=6V, IC=0

-

10

μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=25mA, IB=0

80

-

V

DC Current Gain

hFE (Note)

VCE=4V, IC=2A

55

-

160

Collector-Emitter Saturation Voltage

VCE(sat)

IC=2A, IB=0.2A

-

0.5

V

Transition Frequency

fT

VCE=12V, IC=0.5A

-

20

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

150

-

pF

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