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LTC3564

3564f

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Input DC Bias Current

(Note 5)

Active Mode

VFB = 0.5V or VOUT = 90%, ILOAD = 0A

300

400

μA

Sleep Mode

VFB = 0.62V or VOUT = 103%, ILOAD = 0A

μA

Shutdown

VRUN = 0V, VIN = 4.2V

0.1

μA

fOSC

Oscillator Frequency

VFB = 0.6V or VOUT = 100%

●

1.8

2.25

2.7

MHz

RPFET

RDS(ON) of P-Channel FET

S5 Package

0.15

0.2

DCB Package

0.15

RNFET

RDS(ON) of N-Channel FET

S5 Package

0.15

0.2

DCB Package

0.15

ILSW

SW Leakage

VRUN = 0V, VSW = 0V or 5V, VIN = 5V

±0.01

±1

μA

VRUN

RUN Threshold

●

0.3

1.5

IRUN

RUN Leakage Current

●

±0.01

±1

μA

tSOFTSTART

Soft-Start Time

VFB from 10% to 90% Full Scale

0.6

0.9

1.2

The

● denotes specifications which apply over the full operating junction temperature range, otherwise specifications are TA = 25°C.

VIN = 3.6V unless otherwise specified.

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliabilty and lifetime.

Note 2: The LTC3564E is guaranteed to meet performance specifications

from 0

°C to 125°C junction temperature. Specifications over the –40°C to

125

°C operating junction termperature range are assured by design,

characterization and correlation with statistical process controls. The

LTC3564I is guaranteed over the full –40

°C to 125°C operating junction

temperature range. High junction temperatures degrade operating

lifetimes. Operating lifetime is derated at junction temperatures greater

than 125

°C.

Note 3: TJ is calculated from the ambient temperature TA and power

dissipation PD according to the following formula:

LTC3564ES5: TJ = TA + (PD)(215°C/W)

LTC3564EDCB: TJ = TA + (PD)(64°C/W)

Note 4: The LTC3564 is tested in a proprietary test mode.

Note 5: Dynamic supply current is higher due to the gate charge being

delivered at the switching frequency.

Note 6: This IC includes overtemperature protection that is intended to

protect the device during momentary overload conditions. Junction

temperature will exceed 125

°C when overtemperature protection is active.

Continuous operation above the specified maximum operating junction

temperature may impair device reliability.

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