LESHAN RADIO COMPANY, LTD.

MMBV2101~MMBV2109

–1/3

MV2101~MV2115

1

3

2

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MMBV2101LT1

MMBV2103LT1

MMBV2105LT1

MMBV2107LT1

MMBV2108LT1

MMBV2109LT1

MV2101

MV2104

MV2106

MV2108

MV2109

MV2111

MV2115

These devices are designed in the popular PLASTIC PACKAGE for

high volumerequirements of FM Radio and TV tuning and AFC, general

frequency control andtuning applications.They provide solid–state reliability

in replacement of mechanical tuning methods. Also available in Surface

Mount Package up to 33pF.

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance —10%

• Complete Typical Design Curves

Silicon Tuning Diode

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

MV21XX MMBV21XXLT1

Unit

Reverse Voltage

30

Vdc

Forward Current

200

mAdc

280

225

m W

Derate above 25°C

2.8

1.8

mW/°C

Junction Temperature

+150

°C

Storage Temperature Range

–55 to +150

°C

DEVICE MARKING

MMBV2101LT1=M4G

MMBV2107LT1=4W

MMBV2103LT1=4H

MMBV2108LT1=4X

MMBV2105LT1=4U

MMBV2109LT1=4J

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

30

—

—

Vdc

µAdc)

Reverse Voltage Leakage Current

—

—

0.1

µAdc

Diode Capacitance Temperature Coefficient

—

280

—

ppm/°C

6.8-100p

30 VOLTS

VOLTAGE VARIABLE

CAPACITANCE DIODES

3

CATHODE

1

ANODE