MV2104 datasheet(2/3 Pages) LRC

2 / 3 page

LESHAN RADIO COMPANY, LTD.

MMBV2101~MMBV2109

–2/3

MV2101~MV2115

Min

Nom

M a x

Typ

Min

Typ

Max

MMBV2101LT1/MV2101

6.1

6.8

7.5

450

2.5

2.7

3.2

MMBV2103LT1

9.0

400

2.5

2.9

3.2

MV2104

10.8

13.2

400

2.5

2.9

3.2

MMBV2105LT1/MV2105

13.5

16.5

400

2.5

2.9

3.2

MMBV2107LT1

19.8

24.2

350

2.5

2.9

3.2

MMBV2108LT1/MV2108

24.3

29.7

300

2.5

3.0

3.2

MMBV2109LT1/MV2109

29.7

36.3

200

2.5

3.0

3.2

MV2111

42.3

51.7

150

2.5

3.0

3.2

MV2115

100

110

100

2.6

3.0

3.3

MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.

Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.

MMBV2101LT1 MMBV2103LT1 MMBV2105LT1

MMBV2107LT1 MMBV2108LT1 MMBV2109LT1

MV2101 MV2104 MV2105 MV2108 MV2109

MV2111 MV2115

C T , Diode Capacitance

V R = 4.0 Vdc, f = 1.0 MHz

R, Tuning Ratio

2 /C 30

f = 1.0 MHz

Q, Figure of Merit

R = 4.0 Vdc,

f = 50 MHz

PARAMETER TEST METHODS

1. C T , DIODE CAPACITANCE

(C T = C C + C J ). C T is measured at 1.0 MHz using a

ca-pacitance bridge (Boonton Electronics Model

75A or equivalent).

2. T R, TUNING RATIO

T R is the ratio of C T measured at 2.0 Vdc divided by

C T measured at 30 Vdc.

3. Q, FIGURE OF MERIT

Q is calculated by taking the G and C readings of an

ad-mittance bridge at the specified frequency and

substitut-ing in the following equations:

Q =

πfC

(Booton Electronics Model 33As8 or equivalent).Use

Lead Length ~1/16”.

4.TCC,DIODECAPACITANCETEMPERATURE

COEFFICIENT

TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,

TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the

following equation,which defines TC C:

CT(+85°C)– CT(–65°C )106

TC C =

85+65

C T(25°C)

Accuracy limited by measurement of CT to±0.1pF.

Device

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