STUD419S datasheet(1/8 Pages) SAMHOP

Part #	STUD419S

Description	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

STU/D419S

Symbol

VDS

VGS

IDM

EAS

A

PD

°C

-55 to 150

ID

Units

Parameter

-40

-50

-175

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

mJ

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

-40V

-58A

16 @ VGS=4.5V

11.5 @ VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous(Package limited)

-Pulsed

b

A

Sigle Pulse Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Ver 1.0

www.samhop.com.tw

Sep,15,2008

1

Details are subject to change without notice.

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

TC=25°C

ESD Protected.

G

S

STU SERIES

TO - 252AA( D- PAK )

G

S

D

STD SERIES

TO - 251( I - PAK )

1.8

°C/W

Thermal Resistance, Junction-to-Case

R JC

224

A

TC=25°C

-58

W

70

a

-Continuous(Silicon limited)

-Continuous

a

TA=25°C

-11

Maximum Power Dissipation

TA=25°C

2.5

A

W

Green

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