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STUD419S Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

Part # STUD419S
Description  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD419S Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STU/D419S
Ver 1.0
www.samhop.com.tw
Sep,15,2008
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
100
10
1
0.1
1
10
40
100
V GS =-10V
S ingle P uls e
T A=25 C
DC
10
ms
1m
s
100u
s
R
DS
(ON
) L
im
it
30
25
20
15
10
5
0
24
6
8
10
0
ID=-20A
125 C
25 C
75 C
20.0
10.0
1.0
0
0.4
0.8
1.2
1.6
2.0
25 C
125 C
5.0
75 C
15.0
4800
4000
3200
2400
1600
800
0
Cis s
Crs s
10
8
6
4
2
0
012.5 25 37.5 50 62.5 75 87.5 100
V DS =-20V
ID=-20A
1000
100
1
10
6 10
60 100
600
600
300
6000
T D(off)
Tr
Tf
TD(on)
3
VDS=-20V,ID=-1A
VGS=-10V
0
5
10
15
20
25
30
Cos s
500



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