STUD419S datasheet(3/8 Pages) SAMHOP

Part #	STUD419S

Description	Super high dense cell design for low RDS(ON).

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 8 page

STU/D419S

Ver 1.0

www.samhop.com.tw

Sep,15,2008

-VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

-ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.5

2.5

V GS =-2V

V GS =-10V

V GS =-4.5V

V GS =-2.5V

0.5

1.0

1.5

2.0

2.5

3.0

Tj=125 C

-55 C

25 C

125

Tj( C )

100

150

V GS =-4V

ID=-17A

V GS =-10V

ID=-20A

0.8

1.8

1.6

1.4

1.2

1.0

510

V GS =10V

V GS =4.5V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-50 -25

100 125 150

V DS =V GS

ID=-250uA

-50

-25

100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=-250uA

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